Citation
W. Anwand et al., Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering, APPL SURF S, 149(1-4), 1999, pp. 148-150
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332
→ ACNP
Volume
149
Issue
1-4
Year of publication
1999
Pages
148 - 150
Database
ISI
SICI code
0169-4332(199908)149:1-4<148:CODIII>2.0.ZU;2-Q
Abstract
(SiC)(1-x)(AlN)(x) has been prepared by ion co-implantation of N+ and Al+ i
nto a 6H-SiC n-type wafer. The substrate temperature during implantation wa
s varied from 200 degrees C to 800 degrees C in order to reduce the damage
created by ion implantation. The obtained structures have been investigated
by Slow Positron Implantation Spectroscopy (SPIS) and Rutherford Backscatt
ering and Ion Channeling (RBS/C). Both methods are sensitive to different k
inds of defects and the results are complementary. The defect structures de
termined by SPIS and RBS/C are presented and the influence of the variation
of the substrate temperature is discussed. (C) 1999 Elsevier Science B.V.
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