Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Authors
Taylor, JW Saleh, AS Rice-Evans, PC Knights, AP Jeynes, C
Citation
Jw. Taylor et al., Depth profiling of defects in nitrogen implanted silicon using a slow positron beam, APPL SURF S, 149(1-4), 1999, pp. 175-180
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
149
Issue
1-4
Year of publication
1999
Pages
175 - 180
Database
ISI
SICI code
0169-4332(199908)149:1-4<175:DPODIN>2.0.ZU;2-5
Abstract
Positron annihilation spectroscopy (PAS) has been used to determine the sub surface vacancy profile in Si after implantation with 50 keV nitrogen ions for a range of fluences from 5 x 10(11) to 1 x 10(14) cm(-2). The spatial e xtent of the defect distributions was estimated by employing composite-Gaus sian defect profiles in the ROYPROF positron diffusion analysis program. Th e results are compared with both VEPFIT and TRIM (TRansport of Ions in Matt er) calculations. (C) 1999 Elsevier Science B.V. All rights reserved.