Time-of-flight positron-annihilation induced Auger electron spectroscopy studies of adsorption of oxygen on Si(100)

Authors
Ohdaira, T Suzuki, R Mikado, T
Citation
T. Ohdaira et al., Time-of-flight positron-annihilation induced Auger electron spectroscopy studies of adsorption of oxygen on Si(100), APPL SURF S, 149(1-4), 1999, pp. 260-263
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
149
Issue
1-4
Year of publication
1999
Pages
260 - 263
Database
ISI
SICI code
0169-4332(199908)149:1-4<260:TPIAES>2.0.ZU;2-0
Abstract
The initial stage of adsorption of oxygen on Si(100) was studied by the tim e-of-flight positron-annihilation induced Anger electron spectroscopy (TOF- PAES). The adsorption of oxygen on top of Si(100) was investigated by the r eal-time measurements of oxygen and Si PAES intensities during and after O- 2 exposure. It was found that the initial stage of the top-site adsorption depends strongly on surface temperature, and that the top-site adsorption s tate is not stable. (C 1999 Elsevier Science B.V. All rights reserved.