Ion beam-induced magnetic patterning at the sub-0.1 mu m level

Citation
T. Devolder et al., Ion beam-induced magnetic patterning at the sub-0.1 mu m level, CR AC S IIB, 327(9), 1999, pp. 915-923
Citations number
16
Categorie Soggetti
Multidisciplinary
Journal title
COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II FASCICULE B-MECANIQUE PHYSIQUE ASTRONOMIE
ISSN journal
12874620 → ACNP
Volume
327
Issue
9
Year of publication
1999
Pages
915 - 923
Database
ISI
SICI code
1287-4620(199909)327:9<915:IBMPAT>2.0.ZU;2-X
Abstract
We present a method that allows magnetic patterning of a continuous magneti c film without significant modification of the surface roughness or of the film's optical indices. It involves ion irradiation of Co/Pt multilayers, u sing either a standard ion implantation technology combined with high resol ution masking, or a focussed ion beam. We fabricated arrays of lines or dot s whose magnetic properties differ on a sub-100 nm scale. We describe the i on collision physics on which the techniques are based, as well as some of the observed consequences on the micromagnetic properties of the arrays and on the ultimate resolution. Possible applications to high-density informat ion storage are briefly discussed. (C) Academie des sciences/Elsevier, Pari s.