KTiOAsO4 thin films prepared by pulsed laser deposition

Authors
Liao, Y Wang, X
Citation
Y. Liao et X. Wang, KTiOAsO4 thin films prepared by pulsed laser deposition, CRYST RES T, 34(7), 1999, pp. 825-827
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
34
Issue
7
Year of publication
1999
Pages
825 - 827
Database
ISI
SICI code
0232-1300(1999)34:7<825:KTFPBP>2.0.ZU;2-S
Abstract
A pulsed Nd:YAG Laser was used to evaporate solid targets of KTiOAsO4 (KTA) at power densities of 0.6 to 2.0x10(9) W/cm(2). KTA thin films were deposi ted on glass, Si (100). After proper annealing treatment, single phase, (or thorh-ombic) polycrystalline KTA thin films were obtained. Some propitious of these thin films were also examined.