Spark source mass spectrometric assessment of boron and nitrogen concentrations in crystalline gallium arsenide

The residual or doped element concentration [E] in GaAs measured by SSMS is only accurate with respect to the relative sensitivity coefficient RSCE. F or a trace element concentration, the RSCE = [E](SSMS)/[E](TRUE) is set to unity, if no reference material or method is available to approximate the c oncentration to the true value. For boron a relative sensitivity coefficien t of RSCB = 0.94 +/- 0.08 was obtained using TI-IDMS as a reference method. RSCN = 1 is used for nitrogen determinations. A boron and nitrogen detecti on Limit of 4.4 x 10(13) cm(-3) is achieved. SSMS was used as reference met hod to calibrate the FTIR factor f(E) = [E] / I-alpha due to the integrated local vibrational mode absorption I-alpha of atomic boron and nitrogen in GaAs. A factor of f(B) = (12.0 x 2.7) x 10(16) cm(-1) (517 cm(-1)) and f(N) = (7.4 +/- 0.1) x 10(15) cm(-1) (472 cm(-1)) was obtained for a boron and nine nitrogen containing GaAs samples at 77 K and 10 K, respectively.