Optical properties of excitons in CdS semiconductor-insulator quantum wires

Citation
Sa. Gavrilov et al., Optical properties of excitons in CdS semiconductor-insulator quantum wires, JETP LETTER, 70(3), 1999, pp. 216-221
Citations number
14
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
70
Issue
3
Year of publication
1999
Pages
216 - 221
Database
ISI
SICI code
0021-3640(19990810)70:3<216:OPOEIC>2.0.ZU;2-N
Abstract
The characteristic features of the luminescence spectra of CdS semiconducto r nanocrystals, crystallized in hollow channels in a dielectric template, a re explained in terms of excitonic transitions in semiconductor-insulator q uantum wires. The excitonic transition energies agree with the values calcu lated taking into account the effects of size quantization and the "dielect ric enhancement of excitons" - the large increase in the electron-hole attr action as a result of the difference between the permittivities of the semi conductor and insulator. The theoretically computed binding energies of exc itons in CdS quantum wires with a diameter of 10 nm reach 170 meV. It is sh own that the excitonic transition energy is constant for a wide range of wi re diameters. (C) 1999 American Institute of Physics. [S0021-3640(99)01115- 9].