Motion of hydrogen ions in the proton memory

We have performed a series of measurements on pseudo-metal-oxide-semiconduc tor field effect transistors which form the basis of a nea-volatile memory device involving proton motion in the gate oxide. In particular we have stu died the electric field induced proton drift. The protons appear, initially , to accelerate in the electric field then subsequently are subjected to a dispersive form of transport due to their interaction with the oxide networ k. The dispersive property of proton diffusion can be modelled assuming a G aussian distribution of proton mobilities. We obtain evidence for an initia l barrier to proton motion when the protons are close to the Si substrate/g ate oxide interface corresponding to an electric field similar to 170 kV cm (-1). This field is in reasonable agreement with an estimate of the attract ive proton/electron inversion layer Coulomb interaction field. (C) 1999 Els evier Science B.V. All rights reserved.