Photoluminescence from hydrogenated amorphous silicon oxide thin films

Authors
Zhu, M Han, Y Godet, C Wehrspohn, RB
Citation
M. Zhu et al., Photoluminescence from hydrogenated amorphous silicon oxide thin films, J NON-CRYST, 254, 1999, pp. 74-79
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
254
Year of publication
1999
Pages
74 - 79
Database
ISI
SICI code
0022-3093(19990901)254:<74:PFHASO>2.0.ZU;2-B
Abstract
The photoluminescence (PL) properties of amorphous silicon oxide with diffe rent oxygen content prepared by dual-plasma chemical vapor deposition have been studied. The PL bands in the energy range of 1.7 to 3.2 eV were observ ed. The visible light emission from a-SiOx:H is sensitive to the oxygen con tent. The 3.2 and 2.58 eV PL bands are independent of x. The 2.58 eV PL ban d is attributed to interfacial defects states. The 3.2 eV PL band is attrib uted to the oxygen excess defects. (C) 1999 Elsevier Science B.V. All right s reserved.