Formation of crystalline diamond by ion beam deposition

Citation
Xs. Sun et al., Formation of crystalline diamond by ion beam deposition, J NON-CRYST, 254, 1999, pp. 174-179
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
254
Year of publication
1999
Pages
174 - 179
Database
ISI
SICI code
0022-3093(19990901)254:<174:FOCDBI>2.0.ZU;2-3
Abstract
Direct ion beam deposition was used to study the effect of ion bombardment on the formation of carbon films. Amorphous carbon films were deposited on mirror-polished (0 0 1) silicon substrates by means of a low-energy ion bea m of Ar/H-2/CH4. High-resolution transmission electron microscopy, field em ission scanning electron microscopy and micro-Raman microscopy were used to determine some of the properties of the samples. We found that the amorpho us carbon film condensed to form clusters and the surface roughness of the film increased with increasing the ion dose. At ion doses similar to 10(19) /cm(2), crystalline diamond particles with sizes of 15-30 nm were formed in the matrix of amorphous carbon films. The formation of crystalline diamond particles may be due to the ion bombardment induced stress and energy fluc tuation. (C) 1999 Elsevier Science B.V. All rights reserved.