F. Elakkad, PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF DEEP LEVELS IN ZNTE AND MG0.21ZN0.79TE CRYSTALS, Physica status solidi. b, Basic research, 201(1), 1997, pp. 135-141
Photo-Induced Current Transient Spectroscopy (PICTS) was used to chara
cterize deep impurity levels in P-doped MgxZn1-xTe alloys (x = 0 and 0
.21). The current transient data recorded at different temperatures (1
00 less than or equal to T less than or equal to 300 K) were analysed
to generate PICTS spectra. The analysis uses a three-gate method that
provides access to values of the lifetime comparable to the decay peri
od, similar to the case of DLTS. The detected traps were found to have
depths ranging from O.11 to 0.96 eV. Some of these traps are tentativ
ely assigned to P (0.30 eV), Cu (0.11 to 0.15 eV) and Si or C (0.39 eV
).