PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF DEEP LEVELS IN ZNTE AND MG0.21ZN0.79TE CRYSTALS

Photo-Induced Current Transient Spectroscopy (PICTS) was used to chara cterize deep impurity levels in P-doped MgxZn1-xTe alloys (x = 0 and 0 .21). The current transient data recorded at different temperatures (1 00 less than or equal to T less than or equal to 300 K) were analysed to generate PICTS spectra. The analysis uses a three-gate method that provides access to values of the lifetime comparable to the decay peri od, similar to the case of DLTS. The detected traps were found to have depths ranging from O.11 to 0.96 eV. Some of these traps are tentativ ely assigned to P (0.30 eV), Cu (0.11 to 0.15 eV) and Si or C (0.39 eV ).