DAMAGE AND THERMAL ANNEALING OF DUAL-IONS (PT AND S) IMPLANTED [100]YSZ MATERIAL

A (100) oriented cubic YSZ (yttria stabilized zirconia) single crystal implanted with 160 keV platinum ions and subsequently implanted with 40 keV sulphur ions has been investigated. The implantation was carrie d out at room temperature (RT); Annealing was performed isothermally i n air ambient at 850 degrees C and 1100 degrees C for 4 and 12 hours. Rutherford backscattering spectrometry and channelling (RBS-C) of 2 Me V He ions was used to study the depth distribution of lattice damage a nd impurity, as well as the recrystallization of the damaged layer. X- ray diffraction (XRD) is employed to examine the phase formation. For dual-implanted samples, XRD measurement showed, after annealing, forma tion of monoclinic phase polycrystalline ZrO2 in the damage region and Pt grains with randomly oriented cubic phase, which is consistent wit h RBS-C results. in addition, XRD measurement also revealed formation of hexagonal PtS2 grains.