ELECTRONIC-STRUCTURES OF RES2, RESE2 AND TCS2 IN THE REAL AND THE HYPOTHETICAL UNDISTORTED STRUCTURES

Citation
Cm. Fang et al., ELECTRONIC-STRUCTURES OF RES2, RESE2 AND TCS2 IN THE REAL AND THE HYPOTHETICAL UNDISTORTED STRUCTURES, Journal of physics. Condensed matter, 9(21), 1997, pp. 4411-4424
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
9
Issue
21
Year of publication
1997
Pages
4411 - 4424
Database
ISI
SICI code
0953-8984(1997)9:21<4411:EORRAT>2.0.ZU;2-J
Abstract
The transition-metal dichalcogenides ReX2 (X = Sor Se) and TcS2 with a d(3) electron configuration have distorted; CdCl2 and Cd(OH)(2) struc tures, respectively, with the Re(Tc) atoms in each layer forming paral lelogram-shaped connected clusters (diamond chain). Ab-initio band-str ucture calculations were performed for ReX2 and TcS2, and the hypothet ical undistorted 1T-TcS2 and 3R-ReX2 structures. The calculations show that ReS2, ReS2 and TcS2 are semiconductors with energy gaps of about 1.0 eV, 0.5 eV and 0.7 eV, respectively, while for the undistorted st ructures the Fermi level is in the partly filled band of d(x2-y2) and d(xy) orbitals of the t(2g) manifold. X-ray photoemission spectra for the core levels and valence band of ReSe2 and ReS2 are presented. The Valence x-ray photoemission spectra showed that ReS2 is a p-type semic onductor with an energy gap of about 1.5 eV, while ReSe2 is an n-type semiconductor. The experimental results are in good agreement with the band-structure calculations.