Cm. Fang et al., ELECTRONIC-STRUCTURES OF RES2, RESE2 AND TCS2 IN THE REAL AND THE HYPOTHETICAL UNDISTORTED STRUCTURES, Journal of physics. Condensed matter, 9(21), 1997, pp. 4411-4424
The transition-metal dichalcogenides ReX2 (X = Sor Se) and TcS2 with a
d(3) electron configuration have distorted; CdCl2 and Cd(OH)(2) struc
tures, respectively, with the Re(Tc) atoms in each layer forming paral
lelogram-shaped connected clusters (diamond chain). Ab-initio band-str
ucture calculations were performed for ReX2 and TcS2, and the hypothet
ical undistorted 1T-TcS2 and 3R-ReX2 structures. The calculations show
that ReS2, ReS2 and TcS2 are semiconductors with energy gaps of about
1.0 eV, 0.5 eV and 0.7 eV, respectively, while for the undistorted st
ructures the Fermi level is in the partly filled band of d(x2-y2) and
d(xy) orbitals of the t(2g) manifold. X-ray photoemission spectra for
the core levels and valence band of ReSe2 and ReS2 are presented. The
Valence x-ray photoemission spectra showed that ReS2 is a p-type semic
onductor with an energy gap of about 1.5 eV, while ReSe2 is an n-type
semiconductor. The experimental results are in good agreement with the
band-structure calculations.