DEPOSITION AND CHARACTERIZATION OF SILICON GROWN IN A SIF4 SIH4/H-2 MIXTURE FOR TFT APPLICATIONS/

Authors
QUINN LJ LEE B BAINE PT MITCHELL SJN ARMSTRONG BM GAMBLE HS
Citation
Lj. Quinn et al., DEPOSITION AND CHARACTERIZATION OF SILICON GROWN IN A SIF4 SIH4/H-2 MIXTURE FOR TFT APPLICATIONS/, Thin solid films, 296(1-2), 1997, pp. 7-10
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
296
Issue
1-2
Year of publication
1997
Pages
7 - 10
Database
ISI
SICI code
0040-6090(1997)296:1-2<7:DACOSG>2.0.ZU;2-8
Abstract
The growth of polycrystalline silicon (polysilicon) films from SiF4/Si H4/H-2 gas mixtures is reported. These silicon films have been deposit ed on Coming 1737 glass substrates by adding SiF4 to an existing LPCVD polysilicon process in a Multi Process reactor. In addition, polysili con films have been deposited in the same reactor by a PECVD process. The fluorine concentration was measured by SIMS. Grain size was determ ined by atomic force microscopy and showed a marked increase with fluo rine incorporation. (C) 1997 Elsevier Science S.A.