DEPOSITION OF SIO2 IN INTEGRATED DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE MICROWAVE REACTOR

The deposition of dielectrics onto large areas is mostly carried out i n traditional capacitively coupled 13.56 MHz RF plasma enhanced chemic al vapour deposition reactors. Integrated distributed microwave 2.45 G Hz electron cyclotron resonance (IDECR) configuration may be a possibl e alternative, if its potential advantages are realised. In this work we report on the results of SiO2 deposition obtained with the IDECR sy stem. Thin films of silica were deposited from the mixtures of SiH4 wi th O-2 at different process conditions. Growth rates of silica up to 1 0 Angstrom s(-1) were obtained. Optical properties in UV-visible range were studied with spectroscopic phase-modulated ellipsometry. The fir st results suggest that films have high material quality and the depos ition technique provides a broad process window. We study the influenc e of working pressure, power and gas composition on optical properties of SiO2. (C) 1997 Elsevier Science S.A.