SINGLE-CRYSTAL SILICON ON GLASS

Authors
BAINE PT QUINN LJ LEE B MITCHELL SJN ARMSTRONG BM GAMBLE HS
Citation
Pt. Baine et al., SINGLE-CRYSTAL SILICON ON GLASS, Thin solid films, 296(1-2), 1997, pp. 141-144
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
296
Issue
1-2
Year of publication
1997
Pages
141 - 144
Database
ISI
SICI code
0040-6090(1997)296:1-2<141:SSOG>2.0.ZU;2-K
Abstract
Electrostatic bonding has been used to create single crystal silicon l ayers on glass. Etch stop technology is required for the production of thin silicon layers. implantation of carbon with a dose of 3 E16 cm(- 2) at 180 keV is shown to be an effective etch stop. Thin silicon laye rs have been produced with an average thickness of 3996 Angstrom and a standard deviation of 191 Angstrom across 100 mm diameter glass subst rates.