INVESTIGATION OF THE ELECTRICAL-PROPERTIES OF THE METAL-CALIXARENE-SEMICONDUCTOR STRUCTURES

The research made to use organic materials as active elements in the e lectronic components and sensors has attracted much attention during t he last decade, One of the interesting properties of these materials i s the possibility to easily prepare stable and homogeneous thin films. In this work, we are interested in the study of the electrical proper ties of calixarene thin films using a metal-oligomer-semiconductor str ucture. The electrical study of such a structure can contribute to pro vide complementary information about the nature of the electrical cond uction of the material and to elucidate the interface properties. The aim of this work is to study the different functioning parameters of i on selective field effect transistors and thin film transistors based on calixarenes. We present here the study of I-V characteristics and t he behaviour of capacitance and conductance characteristics versus fre quency, The annealing effects on the films are also investigated. (C) 1997 Elsevier Science S.A.