High-resolution lattice parameter measurement by X-ray grazing incidence diffraction - Application to the interface of silicon on sapphire

Citation
Th. Metzger et al., High-resolution lattice parameter measurement by X-ray grazing incidence diffraction - Application to the interface of silicon on sapphire, PHYS ST S-A, 174(2), 1999, pp. 395-402
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
174
Issue
2
Year of publication
1999
Pages
395 - 402
Database
ISI
SICI code
0031-8965(19990816)174:2<395:HLPMBX>2.0.ZU;2-#
Abstract
Surface sensitive grazing incidence diffraction (GID) is used to study the interface between silicon and sapphire. A thin crystalline layer of alumini um silicate with a lateral lattice parameter slightly different from sapphi re is found and quantified by model calculations. We demonstrate that in GI D, very thin interface layers can be investigated for which the sensitivity for measuring small Bragg angle differences, Delta theta, is enhanced by a factor of about 25 by the projection of Delta theta into the plane perpend icular to the sample surface. The accuracy of the lattice parameter determi nation is thereby improved by at least one order of magnitude.