On the spin-flip mechanisms of electrons in semiconductor quantum wells

Citation
Md. Martin et al., On the spin-flip mechanisms of electrons in semiconductor quantum wells, PHYS ST S-B, 215(1), 1999, pp. 229-233
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
215
Issue
1
Year of publication
1999
Pages
229 - 233
Database
ISI
SICI code
0370-1972(199909)215:1<229:OTSMOE>2.0.ZU;2-G
Abstract
We have studied the temperature dependence of the spin-flip processes of el ectrons in p-type modulation-doped GaAs quantum wells. We have found that a t low temperature (T less than or equal to 30 K) the exchange interaction b etween electrons and holes is the main mechanism responsible for the spin-n ip of the electrons, whereas at higher temperatures the so-called Dyakonov- Perel mechanism dominates. Furthermore, we have found that the recombinatio n time increases considerably with increasing lattice temperature from a va lue of tau(r) approximate to 200 ps at 5 K to tau(r) approximate to 400 ps at 60 K.