Linear birefringence in GaAs/AlAs multiple quantum wells

Transmission spectroscopy has been used to investigate the in-plane linear birefringence of GaAs/ ALAs multiple quantum wells (MQWs) with symmetric we lls/barriers from 20/20 to 70/70 Angstrom. Varying optical thicknesses of t he samples have been used to measure a reference value of the birefringence . While the resonant part in the dispersion of the birefringence has been a ttributed to the contribution from the confined electronic gaps, a nonreson ant background birefringence has been analyzed as a function of the MQW per iod and explained by the presence of local fields.