Jg. Tischler et al., Pressure tuning of competing charged and neutral exciton states in quasi-2D semiconductor structures, PHYS ST S-B, 215(1), 1999, pp. 263-267
Photoluminescence studies of neutral and charged excitons in modulation dop
ed GaAs/Al0.3Ga0.7As quantum wells are performed as functions of applied pr
essure, temperature, and excitation power and frequency. Varying both press
ure and incident power allows sensitive selection of the different exciton
transitions. The Gamma-X crossover in the barriers at approximate to 7 to 9
kbar accelerates photo-pumping of electrons to the barriers. A semi-empiri
cal kinetic model is able to account for the power and pressure dependencie
s of this process.