The fabrication of Si-based light emitting materials is a very active area
of research: We have pursued two avenues of research that have provided int
eresting prospects for practical applications. 1. Bright quantum-confined l
uminescence can be obtained from Si/SiO2 superlattices. Placing them in an
optical microcavity results in a pronounced modulation of the photoluminesc
ence (PL) intensity with emission wavelength. The superlattice PL efficienc
y can be considerably enhanced and its peak wavelength and bandwidth modifi
ed selectively. 2. For porous semiconductors, a method that allows the writ
ing of visible light emitting patterns of arbitrary shape down to the nanom
eter scale is described. The process relies on selective electrochemistry f
or pore formation at surface defects created by focused ion beam implantati
on of Si.