Visible light emission from silicon nanostructures

Citation
Dj. Lockwood et al., Visible light emission from silicon nanostructures, PHYS ST S-B, 215(1), 1999, pp. 297-300
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
215
Issue
1
Year of publication
1999
Pages
297 - 300
Database
ISI
SICI code
0370-1972(199909)215:1<297:VLEFSN>2.0.ZU;2-I
Abstract
The fabrication of Si-based light emitting materials is a very active area of research: We have pursued two avenues of research that have provided int eresting prospects for practical applications. 1. Bright quantum-confined l uminescence can be obtained from Si/SiO2 superlattices. Placing them in an optical microcavity results in a pronounced modulation of the photoluminesc ence (PL) intensity with emission wavelength. The superlattice PL efficienc y can be considerably enhanced and its peak wavelength and bandwidth modifi ed selectively. 2. For porous semiconductors, a method that allows the writ ing of visible light emitting patterns of arbitrary shape down to the nanom eter scale is described. The process relies on selective electrochemistry f or pore formation at surface defects created by focused ion beam implantati on of Si.