Resonant spin-flip Raman scattering studies of II-VI semiconductor heterostructures

Spin-flip Raman scattering (SFRS) has been applied to the investigation of a range of wide bandgap II-VI heterostructures. In the ternary alloys ZnSxS e1-x and Zn1-xMgxSe, we have studied the dependence of the conduction band gyromagnetic ratio on composition and find that the data are described well by the predictions of five-band k . p theory; we have made similar predict ions for the alloy system Zn1-xCdxSe. In the latter system, the fractional monolayer (FM) deposition of CdSe on ZnSe has made possible the formation o f an inhomogeneous Zn1-xCdxSe alloy layer. We have studied SFRS in one such structure in resonance with excitons localized at the CdSe FM and have obt ained a value for the electron gyromagnetic ratio which is equal to that of bulk ZnSe. We also obtain an estimate of a zero-field electron-hole exchan ge splitting of the exciton states of 0.68 meV which is 2.8 (5.2) times lar ger than that observed for bulk ZnSe (CdSe).