Resonant Raman scattering in semiconductor microcavities

We present first-order resonant Raman scattering results on III-V and II-VI semiconductor QW embedded planar microcavities, as a function of both lase r incidence angle and cavity-exciton detuning. We show that the results can be well described by a simple expression for the scattering efficiency, si gma(pol) proportional to (SpiSxi) (SpsSxs), where S-p and S-x are the photo nic and excitonic strength, respectively, of the incoming and scattered cav ity polaritons. We discuss the assumptions leading to this expression in te rms of existing theories of polariton mediated scattering in bulk, adapted to optically confined structures.