Citation
S. Reich et al., Raman scattering by optical phonons in a highly strained InAs/GaAs monolayer, PHYS ST S-B, 215(1), 1999, pp. 419-424
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972
→ ACNP
Volume
215
Issue
1
Year of publication
1999
Pages
419 - 424
Database
ISI
SICI code
0370-1972(199909)215:1<419:RSBOPI>2.0.ZU;2-F
Abstract
Using Raman spectroscopy we studied the InAs-related vibrations of a single
highly strained InAs monolayer embedded in bulk-like GaAs. Experiments wer
e performed in right-angle and forward-scattering configuration with the sc
attered light propagating along the monolayer plane. The energies of the In
As modes are strongly blue-shifted compared to the bulk values. We estimate
the phonon deformation potentials of InAs and obtained the strain in the m
onolayer to be -5%.