Resonant Raman scattering in asymmetric semiconductor quantum disks

We report a theoretical study of the first-order resonant Raman scattering by optical phonons in self-assembled quantum dots (SAQDs). We consider the SAQD as a cylindrical disk with elliptical cross section to simulate shape and confinement anisotropies obtained during the SAQD growth. The lateral c onfinement anisotropy is modelled by harmonic potentials with two different frequencies. In an envelope function Hamiltonian approach and using matrix diagonalization techniques, the exciton wave function and energy states ar e calculated as function of SAQD parameters. Raman scattering polarizabilit y is obtained for a Frohlich coupling between exciton and confined-phonons. We analyze how the Raman scattering technique could give information on co nfinement anisotropy effects and SAQDs geometry. Here, characteristic resul ts for SAQDs of CdSe dots in ZnSe are presented.