A spectro-microscopic approach to study the morphology and elemental distribution of mc-Si surfaces

A photo-emission electron microscope additionally equipped with an energy a nalyzer is used at the synchrotron to obtain near edge absorption and photo electron spectra. The instrument is used to study the morphology and doping inhomogeneities of Si surfaces. We study surfaces of me-Si and demonstrate that the morphology dependent surface potential around the grain boundarie s of that surfaces can be studied without removing the natural oxide. The l ocal oxide thickness as well as the distribution of contaminations are dete rmined by recording the NEXAFS spectra within segments of the surface area investigated in the microscope.