Diffuse X-ray streaks from defects and surface features in boron implantedsilicon

In a grazing incidence X-ray diffuse scattering investigation of boron impl anted silicon we have discovered narrow intensity rods along [111] directio ns. From a detailed analysis of three dimensional reciprocal space maps cle ar evidence is found that the rod-like scattering is due to extrinsic stack ing faults with an average diameter of 71 nm, formed in the implanted layer after rapid thermal annealing. At the same time nanometer sized structures appear at the Si surface which are characterized by atomic force microscop y and specular reflectivity measurements.