X-ray interface characterization of buried InAs layers on GaAs (001)

Authors
Zhang, K Foede, A Schmidt, T Sonntag, P Heyn, C Materlik, G Hansen, W Falta, J
Citation
K. Zhang et al., X-ray interface characterization of buried InAs layers on GaAs (001), PHYS ST S-B, 215(1), 1999, pp. 791-795
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
215
Issue
1
Year of publication
1999
Pages
791 - 795
Database
ISI
SICI code
0370-1972(199909)215:1<791:XICOBI>2.0.ZU;2-X
Abstract
Ultra thin buried InAs layers on GaAs (001) crystals prepared by molecular beam epitaxy are structurally characterized using synchrotron radiation. Gr azing incidence X-ray reflectivity and crystal truncation rods were utilize d to determine the average layer thickness, interface roughness, and the st oichiometry of the layers. From X-ray standing wave experiments the In latt ice site and vertical distribution are determined. We discuss our results i n view of the structural transition of the layer system with In deposition from 1.0 to 2.1 ML.