By means of ab initio molecular dynamics and band-stricture calculations, a
s well as using calculated scanning tunneling microscopy (STM) images, we h
ave singled out one structural model for the (3 x 2) reconstruction of the
Si-terminated (001) surface of cubic SiC, among several proposed in the lit
erature. This is an alternate dimer-row model, with an excess Si coverage o
f 1/3, yielding STM images in good accord with recent measurements. [S0163-
1829(99)51232-0].