Biexcitonic gain characteristics in ZnSe-based lasers with binary wells

Citation
O. Homburg et al., Biexcitonic gain characteristics in ZnSe-based lasers with binary wells, PHYS REV B, 60(8), 1999, pp. 5743-5750
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
8
Year of publication
1999
Pages
5743 - 5750
Database
ISI
SICI code
0163-1829(19990815)60:8<5743:BGCIZL>2.0.ZU;2-3
Abstract
We present systematic spectroscopic studies of the biexcitonic gain and its transition to electron-hole-plasma gain in ZnSe separate-confinement-heter ostructure lasers depending on well width, i.e., biexciton binding energy, excitation density, and temperature. The optical gain curves were obtained by means of the variable-stripe-length method under quasistationary conditi ons. The low-temperature gain spectra are modeled in the framework of a gas of excitons and biexcitons in chemical equilibrium. Sample-dependent redsh ifts of the gain curves are discussed and compared to the biexcitonic photo luminescence. At elevated temperatures (70-90 K), a steep increase of the l aser threshold density accompanied by a strong broadening of the gain curve s indicates a change of the gain process towards recombination of a strongl y Coulomb-correlated electron-hole-plasma. [S0163-1829(99)08631-2].