Aa. Shvartsburg et al., Structures of germanium clusters: Where the growth patterns of silicon andgermanium clusters diverge, PHYS REV L, 83(11), 1999, pp. 2167-2170
We have performed a systematic ground state geometry search for Ge, neutral
s and cations in the n less than or equal to 16 size range using density fu
nctional theory-local density approximation and gradient-corrected methods.
Like their silicon analogs, medium-sized Ge clusters are stacks of tricapp
ed trigonal prism subunits. However, the structures of Ge-n and Si-n for n
= 13 and n greater than or equal to 15 differ in details. The onset of the
structural divergence between the growth patterns of Si and Ge clusters is
confirmed by the measurements of gas phase ion mobilities, fragmentation pa
thways, and dissociation energies.