Structures of germanium clusters: Where the growth patterns of silicon andgermanium clusters diverge

Citation
Aa. Shvartsburg et al., Structures of germanium clusters: Where the growth patterns of silicon andgermanium clusters diverge, PHYS REV L, 83(11), 1999, pp. 2167-2170
Citations number
31
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
11
Year of publication
1999
Pages
2167 - 2170
Database
ISI
SICI code
0031-9007(19990913)83:11<2167:SOGCWT>2.0.ZU;2-W
Abstract
We have performed a systematic ground state geometry search for Ge, neutral s and cations in the n less than or equal to 16 size range using density fu nctional theory-local density approximation and gradient-corrected methods. Like their silicon analogs, medium-sized Ge clusters are stacks of tricapp ed trigonal prism subunits. However, the structures of Ge-n and Si-n for n = 13 and n greater than or equal to 15 differ in details. The onset of the structural divergence between the growth patterns of Si and Ge clusters is confirmed by the measurements of gas phase ion mobilities, fragmentation pa thways, and dissociation energies.