Me. Calixto et Pj. Sebastian, A comparison of the properties of chemical vapor transport deposited CdS thin films using different precursors, SOL EN MAT, 59(1-2), 1999, pp. 65-74
CdS thin films were deposited from chemically precipitated and high purity
CdS precursors adopting chemical vapor transport by gas (CVTG) method. In t
he present study, chemically precipitated and high purity CdS with CdCl2 fl
ux was used as precursors for the chemical vapor transport. The structural,
electrical, optical and opto-electronic properties varied depending on the
type of the precursors used for chemical vapor transport and the condensat
ion temperature. In both the cases two distinct kinds of films (intrinsic-C
dS and semiconducting CdS) were formed depending on the film condensation t
emperature. The intrinsic films showed a band gap close to 2.45 eV, where a
s the n-type films exhibited band gaps below 2 eV. (C) 1999 Elsevier scienc
e B.V. All rights reserved.