The electrodeposition kinetics of thin film CdTe on stainless steel substra
tes was investigated. The dispersion of the refractive index is explained w
ith the bound electron dispersion model. The non-dispersive dielectric cons
tant and the bound electron mass were calculated. Films annealed in argon s
hows a higher value for non-dispersive dielectric constant. Above 0.5 V the
transport mechanism changes to space-charge limited current conduction. Th
e carrier transport is mediated with a set of traps with activation energie
s 0.137, 0.263 and 0.5 eV. The built-in potential of a Au-CdTe Schottky dio
de was measured for different wavelengths and with different white light in
tensities. The built-in potential at different wavelengths is almost consta
nt in the absorption region showing the weak dependence of the built-in pot
ential on minority carriers. (C) 1999 Elsevier Science B.V. All rights rese
rved.