A CdTe/PMeT photovoltaic structure formed by electrodeposition and processing

CdTe thin films were electrodeposited from an ethylene-glyco-based bath by the galvanostatic method. As-deposited and tellurized films were characteri zed by structural, optoelectronic and photoelectrochemical methods. The fil m stoichiometry improved after tellurization of the film at 300 degrees C b y a technique called chemical vapor transport by Gas (CVTG) in a tubular fu rnace. Tellurized films showed near stoichiometry with p-type conductivity in the bulk and n-type surface conductivity. Schottky barrier type photovol taic junctions were obtained using a heavily doped PMeT (poly-3(methylthiop hene), prepared by electropolymerization, displaying nearly metallic behavi or, and CdTe obtained by electrodeposition. A solar to electrical conversio n efficiency of the order of 1% was obtained in the case of PMeT/CdTe junct ion. (C) 1999 Elsevier Science B.V. All rights reserved.