Fast tuning of 3.3 mu m InAsSb/InAsSbP diode lasers due to nonlinear optical effects

InAsSb/InAsSbP double heterostructure diode lasers for the spectral range o f 3.3 mu m grown by liquid phase epitaxy have been investigated. Emission s pectra, far-field patterns and wavelength tuning versus current have been s tudied in the wide current range from threshold value I-th up to 3 I-th, at the temperature of liquid nitrogen. Controlled by current wavelength tunin g in single-mode lasing has been obtained both towards the shorter waveleng ths (up to 4.56 cm(-1)) and towards the longer wavelengths (up to 0.9 cm(-1 )) at the temperature T = 77 K. Comparison of the emission properties of th e lasers, driven by different types of current (short pulse current, sawtoo th pulse current and in quasi cw regime) showed the same quantum-mechanical nature of current tuning. The theoretical model of this nonlinear optical phenomenon is proposed. The estimated times of current tuning defined mainl y by the photon lifetime in the cavity are about 10(-9)-10(-12) s. (C) 1999 Elsevier Science B.V. All rights reserved.