Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix

Germanium nanocrystals immersed in amorphous SiOx matrix have been synthesi zed by r.f. co-sputter deposition of Ge and quartz with post-growth anneali ng at 600-900 degrees C, The structures of the Ge nanocrystals and SiOx mat rix have been studied with x-ray diffraction, high-resolution transmission electron microscopy and XPS depth profiling, Broad-band photoluminescence s pectra have been observed from samples annealed at temperatures higher than 600 degrees C, Possible photoluminescence mechanisms have also been discus sed. Copyright (C) 1999 John Wiley & Sons, Ltd.