Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy

In this paper results concerning optical analysis of the SiO2/Si system per formed by the combined ellipsometric and reflectometric method used in mult iple-sample modification will be presented, This method is based on combini ng both the single-wavelength method and the dispersion method. Three model s of the system mentioned, i.e. the model of the substrate and the layer wi th the smooth boundaries, the same model with a transition layer and the mo del of the substrate and the layer with rough boundaries, will be used to i nterpret the experimental data. The spectral dependences of the optical con stants of silicon and SiO2 with the values of the other parameters will be determined. It will be shown that the simplest model with the smooth bounda ry is the most convenient,vith the experimental data. Copyright (C) 1939 Jo hn Wiley & Sons, Ltd.