RHEED studies of MnF2 epitaxial growth on Si(111) substrates

Citation
Nl. Yakovlev et al., RHEED studies of MnF2 epitaxial growth on Si(111) substrates, SURF INT AN, 28(1), 1999, pp. 264-266
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE AND INTERFACE ANALYSIS
ISSN journal
01422421 → ACNP
Volume
28
Issue
1
Year of publication
1999
Pages
264 - 266
Database
ISI
SICI code
0142-2421(199908)28:1<264:RSOMEG>2.0.ZU;2-F
Abstract
Molecular beam epitaxy was used to grow MnF2 films on a Si(111) substrate w ith a thin CaF2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inheri ted from CaF2, The MnF2 film is coherent to the substrate and has an interl ayer spacing of 0.305 +/- 0.005 mm, which is 3% less than for bulk CaF2, Th icker films have the tetragonal rutile structure, so the film surface is th e (110) plane of MnF2 with its [001] axis parallel to [110] directions of t he substrate. Copyright (C) 1999 John Wiley & Sons, Ltd.