X-ray photon-stimulated ion desorption revealed by standing waves

Authors
Falta, J Hille, A Schmidt, T Materlik, G
Citation
J. Falta et al., X-ray photon-stimulated ion desorption revealed by standing waves, SURF SCI, 436(1-3), 1999, pp. L677-L682
Citations number
23
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
436
Issue
1-3
Year of publication
1999
Pages
L677 - L682
Database
ISI
SICI code
0039-6028(19990810)436:1-3<L677:XPIDRB>2.0.ZU;2-P
Abstract
X-ray photon-stimulated desorption of ions from semiconductor surfaces has been studied in detail by use of synchrotron radiation with photon energies between 2.8 and 12 keV. The excitation process and the desorption site was identified by means of time-of-flight spectroscopy in combination with X-r ay standing waves. Experiments were performed for submonolayers of CsCl on Si(111), Ge on H:S1(111)-1 x 1, as well as on clean Si(111)-7 x 7. (C) 1999 Elsevier Science B.V. All rights reserved.