The growth and structure of Ir films on Cu(100) up to 1.5 ML have been inve
stigated by means of scanning tunneling microscopy (STM), low-energy ion sc
attering spectroscopy (ISS), X-ray photoelectron spectroscopy (XPS) and low
-energy electron diffraction (LEED). After Ir deposition at 200 K strong in
termixing of Cu and Ir has been found, giving rise to step roughening and s
urface etching. With the help of ISS the amount of Ir in the first layer wa
s determined to be less than 20% of the nominal Ir coverage. Temperature-de
pendent ISS and XPS measurements indicate that, upon annealing, Ir first se
gregates completely into the subsurface layer and finally, for temperatures
above 650 K, into deeper layers. In the STM images the Ir atoms in the sec
ond layer are visible owing to a chemical contrast. Deposition of Ir at 620
K results in the formation of a long-range ordered subsurface alloy. The L
EED pattern exhibit a (2 x 1) superstructure with maximal intensity of the
half-order spots occurring at an Ir coverage of about 0.5 ML. In the STM im
ages the surface is marked by a chain-like structure, with chains running a
long the [011] directions. The measured corrugation of 0.3 Angstrom in STM
appeared due to imaging the electronic differences of the embedded Ir-Cu al
loy layer. The ordered alloy phase can be modeled by alternating Cu and Ir
chains located in the second layer that are covered completely by one coppe
r layer. (C) 1999 Elsevier Science B.V. All rights reserved.