Monte Carlo simulations of nanometric structures analysis of micromachinedfield emitters

A Monte Carlo program for the simulation of electron solid interaction of n anometric structures has been developed. The model uses either Mott cross s ection or a modified Rutherford cross section for calculating elastic scatt ering and the Bethe stopping power for calculating the inelastic scattering events. The X-ray production in a specimen is calculated by the Bethe and Gryzinski formulae. Validation of the model has been carried out by calcula ting the relative intensity (k ratio) of thin films to the bulk;X-ray inten sity. The simulation has further been applied to the case of microfabricate d gated field emitters. A large Auger electron signal from the material sit uated up to several hundred nm from the position of the incident electrons is obtained. The magnitude of this signal could in certain cases equal to t hat obtained from pure elemental standards. These results should be taken i nto account while attempting to inspect structures involving sharp topograp hies. (C) 1999 Published by Elsevier Science B.V. All rights reserved.