Vd. Frolov et al., Application of scanning tunneling-field emission microscopy for investigations of field electron emission from nanoscale diamond films, ULTRAMICROS, 79(1-4), 1999, pp. 209-215
A special scanning tunneling-field emission microscope (STFEM) has been use
d for studying field electron emission from thin nanocrystalline diamond fi
lms grown by a DC plasma CVD. These are characterized by turn-on electric f
ields as low as 3.5 V/mu m and by long-term stability of the emission curre
nt. Comparing different surface properties (topography, field electron emis
sion intensity, surface potential and local electroconductivity distributio
ns) on a large surface area it was found that, in most cases, emission cent
re position is not coincident with peaks of the surface profile. It has bee
n noted that the diamond films studied are composed from nano-grained phase
s distinguished by their physical properties. These are thought to be diamo
nd and graphitic phases. The low-field electron emission from the samples s
tudied is considered to be associated with the presence of these phases. Th
e results of the STFEM mapping have been compared with data on macroscopic
current/field field emission characterization. The mechanisms governing low
-held electron emission from nanoscale diamond films are discussed. (C) 199
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