Lattice deformation in AlxGa1-xAs epitaxial layers caused by implantation with high doses of 1 MeV Si ions

A series of highly perfect Al0.45Ga0.55As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7 x 10(13)-2 x 10(15) ions/cm(2) were studied with various conventional and synchrotron X-ray diffraction methods . The presently used methods allowed both the measurement of lattice parame ter changes and strain induced deformation. The evaluation of complete stra in profiles was also performed by numerical simulation of diffraction curve s. It was found that the implantation induced considerable change of lattic e parameter reached the maximum at the dose 3 x 10(14) ions/cm(2). The reco rded curves proved also that the lattice parameter is almost constant in th e near surface region of the implanted layers. The applied doses did not ca use lattice amorphisation at room temperature.