Raman scattering enhancement in porous silicon microcavity

We have measured an enhancement factor of Raman signal up to 30 times using a Fabry-Perot structure made of porous silicon (PS) layers of different po rosity. The obtained enhancement was due to the coupling of the laser radia tion and Stokes photons of porous silicon with the microcavity mode at the optimal laser beam incidence and scattering angles. Our results provide a w ay to increase the sensitivity of Raman spectroscopy for studying the speci es inside porous silicon which can considerably influence the properties of this material and hence of PS based devices. (C) 1999 American Institute o f Physics. [S0003-6951(99)02139-7].