Wq. Han et al., Synthesizing boron nitride nanotubes filled with SiC nanowires by using carbon nanotubes as templates, APPL PHYS L, 75(13), 1999, pp. 1875-1877
A method is described to synthesize silicon carbide (SiC)-filled boron nitr
ide (BN) nanotubes (NT) simultaneously in high yield by using carbon nanotu
bes (CNTs) as templates. This method combines both carbon nanotube-substitu
tion reaction and confined reaction. Through the CNT-substitution reaction,
CNTs react with boron oxide vapor in the presence of nitrogen gas to form
BN NTs, whose diameters and lengths are similar to those of the starting CN
Ts. The formation of the SiC filling is proceeded by the penetration of SiO
vapor into the cavity of the nanotubes and subsequent reaction of SiO vapo
r with the inner carbon layers or volatile carbon mono-oxide in the interio
r to form SiC nanowires. The filled length can be up to the entire length o
f the nanotubes. SiC-filled (BN)(x)C-y nanotubes also form in the product.
(C) 1999 American Institute of Physics. [S0003-6951(99)05139-6].