High-Q wet-etched GaAs microdisks containing InAs quantum boxes

Authors
Gayral, B Gerard, JM Lemaitre, A Dupuis, C Manin, L Pelouard, JL
Citation
B. Gayral et al., High-Q wet-etched GaAs microdisks containing InAs quantum boxes, APPL PHYS L, 75(13), 1999, pp. 1908-1910
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
13
Year of publication
1999
Pages
1908 - 1910
Database
ISI
SICI code
0003-6951(19990927)75:13<1908:HWGMCI>2.0.ZU;2-O
Abstract
A two-steps wet-etching fabrication process producing high-quality GaAs mic rodisks is presented. We report an optical characterization of these microd isks, using the photoluminescence of InAs quantum boxes as an internal ligh t source. Thanks to an improved smoothness of the microdisk sidewall, cavit y Q's as high as 12 000 are observed, which opens very challenging novel ap plication prospects for semiconductor microdisks. (C) 1999 American Institu te of Physics. [S0003-6951(99)00339-3].