Implantation-induced amorphization of InP characterized with perturbed angular correlation

The perturbed angular correlation (PAC) technique has been used to characte rize the implantation-induced crystalline-to-amorphous transformation in In P. Radioactive In-111 probes were first introduced in InP substrates which were then irradiated with Ge ions over an ion-dose range extending 2 orders of magnitude beyond that required for amorphization. Crystalline, disorder ed and amorphous probe environments were subsequently identified with PAC. The dose dependence of the relative fractions of the individual probe envir onments were determined, a direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization proce ss via the overlap of disordered regions was observed. Given the ability to differentiate disordered and amorphous probe environments, a greater effec tive resolution was achieved with the PAC technique compared with other com mon analytical methodologies. (C) 1999 American Institute of Physics. [S000 3-6951(99)02639-X].