X-ray imaging and diffraction from surface phonons on GaAs

Citation
W. Sauer et al., X-ray imaging and diffraction from surface phonons on GaAs, APPL PHYS L, 75(12), 1999, pp. 1709-1711
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
12
Year of publication
1999
Pages
1709 - 1711
Database
ISI
SICI code
0003-6951(19990920)75:12<1709:XIADFS>2.0.ZU;2-1
Abstract
Surface acoustic waves (SAWs) are excited on the GaAs (001) surface by usin g interdigital transducers, designed for frequencies of up to 900 MHz. The emitted phonons with wavelengths down to 3.5 mu m are visualized and charac terized by combined x-ray diffraction techniques. Using stroboscopic topogr aphy, the SAW emission of a parallel and a focusing transducer geometry are imaged. High-resolution x-ray diffraction profiles show up to 12 phonon-in duced satellite reflections besides the GaAs (004) reflection, with a width of 9 arcsec each. The diffraction pattern is simulated numerically, applyi ng the kinematical scattering theory to a model crystal. From fits to measu red diffraction profiles at different excitation voltages, the SAW amplitud es were calculated and found to be in the sub-nm range. (C) 1999 American I nstitute of Physics. [S0003- 6951(99)01538-7].