Electron transport in AlGaInP quantum well lasers

By placing a direct-gap monitor layer (or collector) in the p-cladding laye r of red-emitting AlGaInP laser diode structures, we have studied the trans port of electrons through this layer by observation of spontaneous emission . Pulsed optical excitation superimposed on cw electrical injection has bee n used to determine the delay time between optical injection of carriers in to the well and radiative recombination from the monitor pit. Computer simu lations using measured values of minority carrier lifetime for the well and monitor layer show that the transit time for electrons through the p-cladd ing layer correspond to an electron mobility of 160 cm(2)/V s. (C) 1999 Ame rican Institute of Physics. [S0003-6951(99)02238-X].